1 item symbol ratings unit remarks drain-source voltage v ds 500 v dsx 500 continuous drain current i d 3.6 pulsed drain current i d(puls] 14.4 gate-source voltage v gs 30 repetitive or non-repetitive i ar 3.6 non-repetitive maximum avalanche energy e as 227.9 repetitive maximum avalanche energy e ar 6.0 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 maximum power dissipation p d 60 2.02 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3987-01L,s,sj fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =500v v gs =0v v ds =400v v gs =0v v gs =30v i d =1.8a v gs =10v i d =1.8a v ds =25v v cc =300v i d =1.8a v gs =10v r gs =10 v v a na s pf nc v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 2.083 62.0 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd trr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =250v i d =3.6a v gs =10v i f =3.6a v gs =0v t ch =25c i f =3.6a v gs =0v -di/dt=100a/ s t ch =25c v v a a v a mj mj kv/ s kv/ s w w c c 500 3.0 5.0 25 250 100 1.84 2.3 1.7 3.4 330 500 50 75 2.5 5.0 11 18 5.0 7.5 23 35 6.0 9.0 13 20 5.5 8.5 2.5 3.8 1.00 1.50 0.5 2.3 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series 200511 = < vgs=-30v note *1 note *2 note *3 vds 500v note *4 tc=25 c ta=25 c = < = < note *1 tch 150c note *2 starting tch=25c, i as =1.5a, l=186mh, v cc =50v, r g =50 e as limited by maximum channel temperrature and avalanche current. see to ?avalanche energy? graph. note *3 repetitve rating : pulse width limited by maximum channel temperature. see to ?transient thermal impedance? graph. note *4 i f -i d , -di/dt=50a/ s, vcc bv dss , tch 150c = < = < see to p4 = < min. typ. max. units http://www.fujielectric.co.jp/fdt/scd/
2 characteristics 2SK3987-01L,s,sj (500v/3.6a/2.3 ) fuji power mosfet
3 2SK3987-01L,s,sj (500v/3.6a/2.3 ) fuji power mosfet
4 2SK3987-01L,s,sj (500v/3.6a/2.3 ) fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ outline drawings [mm] t-pack(l) t-pack(s) t-pack(sj) [d2-pack]
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